Abstract
Abstract Ballistic-electron emission microscopy (BEEM) allows to study the transport of hot electrons in thin films and at buried interfaces with a lateral resolution in the nanometer range. In this review, the relevant transport processes are described in detail. For the particular case of the interface between thin Au films and n -type Si(111), BEEM results are presented. In BEEM imaging, it is observed that the collector current increases when the tip is located at terrace edges of the Au film. This effect demonstrates an improved matching of the populated electron states in the metal with the conduction-band states in the semiconductor in the case of electron injection at a terrace edge. It indicates a strong influence of the electronic structure of the metal on hot-electron transport as well as a predominant conservation of lateral momentum at the interface.
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