Abstract
An analytical investigation of the effect of a dc electric field on the magnetic susceptibility of conduction electrons in a degenerate semiconductor at low temperatures has been made. From energy balance considerations, the electron temperature (Te) as a function of the strength of the dc electric field has been determined. Ionized impurity scattering has been assumed to be the dominant momentum relaxation process; the energy loss has been attributed mainly to the scattering by acoustic phonons (via both screened deformation and screened piezoelectric potentials), and by polar optical phonons. Numerical results have been presented for a typical case of an n-type InAs sample for fields up to 10 V/cm. It is found that susceptibility decreases with increasing field strengths. The plot of susceptibility (χ) as a function of dc electric field (E) leads to a kink at a field strength of about 450 mV/cm. This is explained on the basis of the spontaneous emission of polar optical phonons. It is further suggested that the measurement of susceptibility may be usefully employed as a tool for investigation of hot-electron phenomena.
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