Abstract
A comprehensive study of hot-electron-induced substrate and gate currents in deep-submicrometer MOSFETs is presented. The substrate- and gate-current characteristics for devices with channel lengths as small as 0.2 mu m and oxide thickness as thin as 55 AA are examined. Implications for MOSFET reliability and EPROM programming are discussed. In the deep-submicrometer regime, established hot-electron concepts and models are found to be applicable; however, consideration of the finite depth of the current path and current-crowding-induced weak gain control becomes much more important. With these modifications, physical analytical models for substrate and gate currents are developed and verified for deep-submicrometer devices. >
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