Abstract
MOS and p-n diodes formed by the part structure of a MOSFET made from standard process were found emitting light at the interfaces of these devices. The structures under different bias conditions have their special characteristics and light spectra. As the device scaling down, electric field affects the behavior of a submicron device strongly. Hot carriers are caused by electric field and are responsible for the light emission in these devices. Beside the intra-band transition at conduction band, which can be enhanced by electric field, the tunneling and impact ionization are also caused by the strong electric field. Their influences on the light emission in our devices were investigated.
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