Hot-Carrier Degradation During Dynamic Stress

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In Chapter 1, the degradation of MOS transistors under DC stress conditions was considered. In a real circuit, however, most of the devices are operated dynamically, on account of which the degradation under AC stress conditions has gained increased attention. The most important question in these studies is whether the AC degradation can or cannot be predicted based on a set of DC degradation measurements. When the prediction based on DC measurements stands true, the AC degradation can be studied as a quasistatic process. When, however, the extrapolation turns out to be invalid, physical insight should be obtained for the deviating behavior.