Hot‐wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

Abstract

AbstractWe report on a new approach to MOCVD growth of GaN, i.e. hot‐wall MOCVD, and its application to homoepitaxy on GaN substrates. The quality of the epilayers is examined by photoluminescence (PL). Homoepitaxially hot‐wall MOCVD grown GaN layers show (1) intense PL free‐exciton emissions relative to the intensity of the principal bound‐exciton emission and (2) homogeneous cathodoluminescence emission within the terraces developed during the step‐flow growth. Impurity concentrations in the material are measured by secondary ion mass spectrometry (SIMS). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)