Abstract
The authors measured photoluminescence (PL) spectra under an applied electric field along the hetero-interface to study hot electron scattering mechanisms in HEMTs. The electron temperature obtained from the PL spectra, indicates hot electron scattering conditions. An undoped AlGaAs barrier layer is inserted into the HEMT's channel layer. PL intensity is enhanced by introducing an undoped AlGaAs barrier layer on the substrate side, since holes are confined within the quantum well. PL spectra are obtained for three types of AlGaAs/GaAs/AlGaAs single quantum wells (SQWs) whose doping conditions differed. They also measured barrier layer PL spectra to observe the effect of real space transfer (RST). The authors propose an energy cooling model to explain the anomalous cooling of hot electrons observed when RST occurred.
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