Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Abstract

Hot-electron injection in high dielectric constant stacked-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied theoretically by combining a hybrid Monte Carlo/iterative simulation of hot carrier transport with a transfer-matrix calculation of the transmission probability through the insulators. It is shown that the reduced potential barrier between the silicon and the high dielectric constant material results in high gate currents in short channel MOSFETs even at low drain voltages. The structure may therefore find applications in electrically erasable programmable read-only memory devices.