Abstract
AbstractHot electron High‐frequency mobility in wide‐ and narrow‐gap semiconductors under the influence of a small ac electric field superimposed on a dc bias electric field using the balance equation theory recently developed for an arbitrary energy band is investigated. In the wide‐gap semiconductor SiC the frequency dependent mobility predicted by the balance equation approach is not in quantitative agreement with a previous calculation based on the Boltzmann equation with a displaced Maxwellian distribution function. In narrow‐gap semiconductors it is found that nonparabolicity strongly affects the frequency dependence of the hot‐electron small signal mobility, such that the curves of the real and imaginary parts of the ac frequency in a strongly nonparabolic system (InAs) appear completely different from those in a weakly or moderately nonparabolic system (GaAs).
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