Abstract
The energy relaxation associated with acoustic phonons has been investigated in a series of modulation doped GaAs/AlGaAs single and multiple quantum wells grown by molecular beam epitaxy, using the hot electron Shubnikov — de Haas effect. The power loss is shown to be proportional to (T e 2 − T L 2) for electron temperatures 2.2K < T e < 8K and proportional to (T e 3 − T L 3) for 8K < T e < 20K. The energy loss rates due to acoustic phonon scattering via both deformation potential coupling and piezoelectric coupling have been calculated. The total energy loss rate as a function of electron temperature is compared with the experimental results. Good agreement is obtained for 2.2K < T e < 8K. Above 8K the energy loss rate is seen to rise above the predicted values, indicating the onset of an extra energy relaxation mechanism. The application of a high electric field (E = 3kV/cm) at low lattice temperatures is shown to induce persistent parallel conduction and a subsequent reduction of the low field well mobility.
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