Abstract

Studies have been made of Si 2DEGS formed on (001) high resistivity ( rho approximately 1000 Omega cm) p-type substrates in the hot-electron region. Thermal population of an excited subband leads to a decrease in resistance in contrast with the increase seen in 2DEGS formed on lower resistivity substrates, and this suggests that mu (Eex)> mu (E0) in these samples, though which of the excited subbands, E'0 or E1, is lowest is not known. Tensile stress measurements indicate that mu (E'0)> mu (E0) and this is attributed to the greater average distance of the electrons from the interface resulting from their weaker confinement in high-resistivity substrates.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.