Abstract
Studies have been made of Si 2DEGS formed on (001) high resistivity ( rho approximately 1000 Omega cm) p-type substrates in the hot-electron region. Thermal population of an excited subband leads to a decrease in resistance in contrast with the increase seen in 2DEGS formed on lower resistivity substrates, and this suggests that mu (Eex)> mu (E0) in these samples, though which of the excited subbands, E'0 or E1, is lowest is not known. Tensile stress measurements indicate that mu (E'0)> mu (E0) and this is attributed to the greater average distance of the electrons from the interface resulting from their weaker confinement in high-resistivity substrates.
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