Abstract
The general calculation of Poole-Frenkel conduction for amorphous solids must take into account the existence of Coulombic centers and a range of shallow trap centers. The hot-electron concept leads to the proper distribution of electrons between these traps and the conduction band in the presence of the applied electric field and at finite temperatures. Including the effect of hot electrons we achieve a better agreement between the theory and experimental data obtained with amorphous Al2O3, Ge, and SiO films.
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