Abstract
Metal-oxide-semiconductor field-effect transistors (MOSFETs) in-corporating hafnium-silicate (HfSiON) dielectrics with different compositions were fabricated and investigated for hot carrier reli-ability. The experimental results reveal that the channel hot carrier (CHC) stress is worse than drain avalanche hot carrier (DAHC) stress. Moreover, the experimental results also show that the in-crease of oxide trapped charges (ΔNot) depends on Hf content and is about one order of magnitude larger than that of interface traps (ΔNit) after CHC or DAHC stress. Finally, some important interfa-cial parameters, including ΔNit, ΔDit and ΔNot, have also been characterized through the transconductance and subthrehsold swing (SS) methods.
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