Abstract

Abstract We have performed pseudopotential calculations of the electronic structure of GaAs-GaAlAs superlattices which reveal a rich variety of new confined states in the hot carrier energy range. In particular, we find states exhibiting a mixing of momenta from the principal and secondary band minima which leads to significant changes in recombination rates. We have also calculated the effect of strong external electric fields upon the electronic structure. Broad resonances are obtained and the computed resonance widths account for the observed quenching of exciton luminescence.

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