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https://doi.org/10.1016/0038-1101(89)90199-8
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Cite Journal: Solid State Electronics |  Publication Date: Dec 1, 1989 |
 Citations: 1 |
Affiliation: Saitama University, The University of Tokyo, Osaka University
Hot carrier magnetophonon resonances of n-type Si, short channel InP and p-type InSb were investigated in pulsed high magnetic fields up to 40 T. Using a recently developed high resolution technique in pulsed high fields, many new features of the hot carrier-phonon interactions in high magnetic fields were found.
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