Abstract
The reverse-bias current in the gated-diode configuration of hot-carrier degraded MOS devices was measured. It is shown that interface defects created by the degradation contribute predominantly to the generation current. The spatial distribution of the deep-level defects was obtained by means of device simulation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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