Abstract
We have investigated hot carrier stress degradation for short channel (100 nm and 80 nm) nMOSFETs with ultra-thin gate oxides (2.5 nm). Under high drain bias, gate current was measured well above that is expected from direct tunneling itself We have found that this hot carrier enhanced gate current mechanism plays a significant role in the degradation of nMOSFETs. The degradation under very accelerated stress bias, where hot carrier enhanced gate current is dominant, was relatively insensitive to stress bias and time, compared to the degradation under low voltage hot carrier stress. Unless properly considered, the additional mechanism can cause the extrapolated lifetime to be overestimated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
