Abstract
This paper reports for the first time on anomalous hot carrier effects observed in vertically integrated trench-based (TB-MOS) power transistors. The avalanche current reaches a maximum at intermediate drain voltage, and decreases for increasing drain voltage. The hot carrier lifetime of the transistors yields a minimum at intermediate drain voltage, and not at the maximum drain voltage. Charge pumping experiments enable to locate the degradation in the TB-MOS. A degradation model is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
