Abstract
Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (E/sub m/). Experimental results using SOI MOSFET's with body contacts indicate that E/sub m/ is just a weak function of thin-film SOI thickness (T/sub si/ and that E/sub m/ can be significantly lower than in a bulk device with drain junction depth (X/sub j/) comparable to SOI's T/sub si/. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (I/sub G/) of studying E/sub m/ in SOI device without body contacts. Thin-film SOI MOSFET's have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought. >
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