Abstract
From a systematic study of the hot-carrier-induced degradation in fully depleted submicrometer NMOS/SIMOX as a function of front- and back-gate biases during stress, the authors found that the apparent changes of the front-channel transistor parameters, measured at grounded back gate, could be largely attributed to the virtual back-gate bias effect arising from the trapped charge in the buried oxide. The strong dependence of carrier injection at the back interface on the back-gate bias and its resulting effect on the front-channel transistor parameters are also presented. >
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