Abstract
Abstract We report direct measurements of the high field drift velocities of photoexcited electrons in p-type multiple quantum well structures of GaAs/Al0.48Ga0.52As by picosecond time-of-flight techniques. Negative differential mobility is observed at electric fields > 8kV/cm, caused by real-space and valley transfer of hot carriers into AlxGa1−xAs, which is an indirect semiconductor at x = 0.48. A new, all-optical time-of-flight technique is described and compared with the conventional opto-electrical time-of-flight method.
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