Abstract
We report direct measurements of the high field drift velocities of photoexcited electrons in p-type multiple quantum well structures of GaAs/Al 0.48Ga 0.52As by picosecond time-of-flight techniques. Negative differential mobility is observed at electric fields >8 kV/cm. caused by real-space and valley transfer of hot carriers into Al x Ga 1− x As, which is an indirect semiconductor at x = 0.48. From the photoluminescence spectra the carrier temperatures, at which the transfer effects occur, are determined.
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