Abstract
We use the gated-diode configuration at small forward bias to detect hot-carrier induced defect states in n-channel LDD MOSFETs. With the aid of a 2-dimensional device simulation the measured diode current provides the spatial distribution of the defect states. The defect states are found to appear between the substrate-n?-drain and n?-n+-drain junctions. We investigate the dependence of the spatial defect distribution on the stress time and on the gate voltage during stress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.