Abstract
We use the gated-diode configuration at small forward bias to detect hot-carrier induced defect states in n-channel LDD MOSFETs. With the aid of a 2-dimensional device simulation the measured diode current provides the spatial distribution of the defect states. The defect states are found to appear between the substrate-n?-drain and n?-n+-drain junctions. We investigate the dependence of the spatial defect distribution on the stress time and on the gate voltage during stress.
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