Abstract
This paper presents a new physical compact model for interface state creation due to hot-carrier degradation in advanced SiGe heterojunction bipolar transistors (HBTs). An analytical model for trap density is developed through an accurate solution of the rate equation describing generation and annihilation of interface traps. The analytical aging law has been derived and implemented in terms of base recombination current parameters in HiCuM compact model and its accuracy has been validated against results from long-term aging tests performed close to the safe-operating areas of various HBT technologies. The model implementation uses a single additional node, alike previous implementations, thereby preserving its simplicity, yet improving the accuracy and the physical basis of degradation.
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