Homogeneous 2D MoTe2 CMOS Inverters and p-n Junctions Formed by Laser-Irradiation-Induced p-Type Doping.

Abstract

Among all typical transition-metal dichalcogenides (TMDs), the bandgap of α-MoTe2 is smallest and is close to that of conventional 3D Si. The properties of α-MoTe2 make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal-oxide-semiconductor (CMOS) inverters or p-n junction by controlling the charge-carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p-n junction diode and CMOS inverter on a single α-MoTe2 nanoflake. The n-doped channel of a single α-MoTe2 nanoflake is selectively converted to a p-doped region via laser-irradiation-induced MoOx doping. The homogeneous 2D MoTe2 CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NMH = 0.52 VDD , NML = 0.40 VDD ), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger-scale MoTe2 CMOS circuits.