Homoepitaxial growth of 4H–SiC [formula omitted] and nitrogen doping by chemical vapor deposition

Abstract

Homoepitaxial growth of 4H–SiC (0 3 3 ̄ 8) by hot-wall chemical vapor deposition has been investigated. The 4H–SiC (0 3 3 ̄ 8) is inclined by 54.74° toward [0 1 1 ̄ 0] from (0 0 0 1), which is semi-equivalent to (0 0 1) in a zincblende structure. 4H–SiC homoepitaxial layers with a specular surface can be obtained on 4H–SiC (0 3 3 ̄ 8) without intentional off angle. The lowest donor concentration of undoped 4H–SiC (0 3 3 ̄ 8) epilayers was 3×10 14 cm −3. The doping efficiency of nitrogen on 4H–SiC (0 3 3 ̄ 8) was similar to that on 4H–SiC (1 1 2 ̄ 0) , which is in between that on off-axis (0 0 0 1) and (0 0 0 1 ̄ ) faces. Growth results on this novel face are compared with those on off-axis {0 0 0 1} and (1 1 2 ̄ 0) from viewpoints of growth mechanism and impurity doping.