Hollow defect elimination during solution growth of SiC

Abstract

ABSTRACTUsing pure and alloyed silicon melt saturated with carbon we investigated systematically hollow defect elimination during SiC solution growth over a wide temperature range from 1500°C to 2100°C. In the process of solution growth all hollow defects present in a substrate demonstrate an evident tendency to act as growth centers and after an adequate period of treatment they were overgrown. Growth morphologies observed in the vicinity of hollow defects are rather different. A new visualization method is proposed, which reveals crystalline defects associated with hollow cores and allows to detect the quantity and the distribution of HD in a whole SiC wafer. Classification of hollow defects based on these observations is presented and the corresponding closing mechanisms are discussed.