Holistic Approach toward a Damage-Less Sputtered Indium Tin Oxide Barrier Layer for High-Stability Inverted Perovskite Solar Cells and Modules.

Abstract

The commercialization of perovskite solar cells (PSCs) requires the development of long-term, highly operational-stable devices. An efficient barrier layer plays a key role in improving the device stability of planar PSCs. Here, we focus on the use of sputtered indium tin oxide (ITO) as a barrier layer to stop major degradations. To mitigate efficiency losses of cells with the ITO barrier, we optimized various sputtering process parameters such as ITO layer thickness, target power density, and working pressure. The fabricated planar inverted PSCs based on the novel ITO barrier optimization demonstrate a power conversion efficiency (PCE) of 19.05% on a cell area of 0.09 cm2. The encapsulated cells retained >80% of their initial efficiency after 1400 h of continuous illumination at 55 °C and 94.5% of their initial PCE after 1500 h stored in air. Employing such a holistic stabilization approach, the PSC minimodules without encapsulation achieved an efficiency of 16.4% with a designated area of 2.28 cm2 and retained approximately 80% of the initial performance after thermal stress at 85 °C for 350 h under ambient conditions.