Abstract
High-density microwave plasma generated and sustained by evanescent waves emitted from a holey-plate has been studied. In this holey-plate (HP) plasma source, microwave power at 2.45 GHz supplied from the cavity is converted into an evanescent mode through the use of a holey-plate. Two different geometries of the HP plasma source, a partial–coaxial cavity type and a rectangular waveguide type, have been designed. In the former, the plasma density is 8.7×10 17 m −3 with an electron temperature of 3 eV at an argon gas pressure of 1.3 Pa. In the latter, the measured results of the polymer-resist ashing rate and its uniformity using the oxygen plasma are shown. It is possible to etch polymers at rates larger than 1 μm/min without heating the substrate, further obtaining a uniformity of ±24% within a 6″ Si wafer.
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