Abstract
Carbon-tetrabromide (CBr4) is utilized as the p-type doping source in modulation-doped pseudomorphic In0.3Ga0.7Sb/AlxGa1−xSb quantum well structure. Carbon delta-doping is achieved by switching off group III elements while the flow of CBr4 is on during the growth of AlSb barrier layer. The hole mobility of strained In0.3Ga0.7Sb quantum well decreases monotonically from 600 to 400 cm2/V s while the sheet carrier concentration increases from 7.5×1011 to 4.1×1012 cm−2 with increasing carbon delta-doping.
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