Abstract
Assertions that the hole-electron product may be larger than n i 2 exp ( qV/ kT) under high injection conditions are found in the old and recent literature. This paper shows that the np product must always be ⩽ n i 2 exp( qV/ kT). Plots of numerical results for electrostatic potential, quasi-fermi levels and carrier concentration for an asymmetrical np junction under low and high injection conditions are given.
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