Abstract

AbstractWe present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10-9 cm2/V), hole mobilities reach values as large as 0.01 cm2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

Highlights

  • The drift of electrons and holes in electric fields is central to most electronic devices

  • While the fundamental physics of drift is fairly well established for most crystalline semiconductors, for hydrogenated amorphous silicon (a-Si:H) and other disordered semiconductors our understanding remains provisional

  • The drift-mobilities are generally lower than expected from this activated behavior; in this regime, the electrical response times of the samples were approaching the times used to calculate the drift-mobilities

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Summary

Vlahos Pennsylvania State University

Follow this and additional works at: https://surface.syr.edu/phy Part of the Physics Commons. Recommended Citation "Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon," S. In Amorphous and Nanocrystalline Silicon Based Films - 2003, edited by J.R. Abelson, G. A. Schiff (Materials Research Society Symposium Proceedings Vol 762, Pittsburgh, 2003), pp. Yuan* Department of Physics, Syracuse University, Syracuse, NY 13244-1130

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