Abstract
Hole capture and emission processes in SiO 2 layers are analysed based on hole exchange between oxide defect centers and the SiO 2 valence band. This analysis is applied to the generation and annihilation processes of high-field-induced positive oxide charges. The hole capture cross section and hole emission coefficient of the defect centers are obtained by examining positive charge generation and annihilation processes. The positive charge formation efficiency increases with increase of applied electric field. However, the hole capture cross section of the defect centers is independent of the electric field. The hole capture cross section and hole emission coefficient obtained from this study are 3.9 × 10 −16 cm 2 and 6.45 × 10 −6s −1, respectively. The results demonstrate that the oxide defect centers are neutral hole traps.
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