Hole band structure of p-type delta-doping quantum wells in silicon

Abstract

The subband structure of p-type delta-doping wells in Si is calculated within self-consistent six-component envelope function theory, taking the heavy hole, light hole and spin-orbit split bulk bands into account. The subband dispersion shows a pronounced anticrossing behavior, being enhanced by the small splitting between heavy and light hole levels and the strong subband anisotropy parallel to the doping layers. For sheet doping concentrations above 1013 cm−2, subbands derived from the spin-orbit split band compete with heavy and light hole subbands. A comparison with experimental results shows good agreement.