Abstract
Hole and electron drift velocities in CdSe have been measured as a function of the electric field at room temperature using the time of flight technique. The hole mobility, measured for the first time in the bulk material, is 75 cm 2V −1 sec −1. The electron mobility is 720 cm 2V −1 sec −1. The mobility of both charge carriers is electric field independent up to 10 4 V cm −1. Experimental and theoretical data are in good agreement.
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