Abstract
Optical properties of a Ho-doped LaF3 single crystal have been detailed investigated as a promising material for 2μm and 2.9μm lasers for the first time. Judd–Ofelt theory was applied to analyze the absorption spectrum to determine the J–O intensity parameters Ωt(t=2,4,6), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the 5I7→5I8 and 5I6→5I7 transitions were obtained by using the Fuchtbauer–Ladenburg method. The gain cross-section for 2μm emission becomes positive once the population inversion level reaches 30%. The Ho:LaF3 crystal shows long fluorescence lifetime of 5I7 manifold (25.81ms) as well as 5I6 manifold (10.37ms) compared with other Ho3+-doped crystals. It can be proposed that the Ho:LaF3 crystal may be a promising material for 2μm and 2.9μm laser applications.
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