Abstract
The efficient 2.87 μm emission of Ho3+: 5I6→5I7 transition via Nd3+ sensitization in Nd,Ho:LaF3 crystal was obtained under 808 nm LD excitation for the first time. The lifetime of Ho3+:5I7 decreases dramatically from 26.28 ms to 6.41 ms via Nd3+ co-doping. The mechanism of sensitization and deactivation by Nd3+ was investigated compared with the Ho:LaF3 crystal. The absorption cross-section, emission cross-section, and fluorescence quantum efficiency were estimated and discussed. All the results indicate Nd,Ho:LaF3 crystal an attractive gain medium for solid-state lasers around 2.87 µm under an 808 nm LD pump.
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