Abstract
We report the WAL related magneto-conductivity analysis of topological insulators (Bi2Te3 and Bi2Se3) fitted using the Hikami Larkin Nagaoka (HLN) equation. At lower applied magnetic fields and temperatures, the studied topological insulators (Bi2Te3 and Bi2Se3) followed the HLN equation. Further, the extracted values of the fitting parameters i.e., phase coherence length (lφ) and the pre-factor (α) suggested that the electronic conduction mechanism in these topological insulators is dominated by both surface states driven weak anti localization (WAL), as well the bulk WL (weak localization) states. Summarily, the short letter discusses briefly on the competing effect of WAL and WL conduction mechanism of topological insulators analyzed by the HLN model.
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