Abstract
Novel amorphous and polycrystalline silicon high-voltage thin-film transistors (TFTs) have been fabricated for use in large-area (in excess of 30 cm*30 cm) microelectronics. These devices are important for linear pagewide input and output devices as well as two-dimensional displays. The authors describe the improved device configuration and contrast this high-performance polycrystalline silicon TFT with an amorphous silicon high-voltage TFT which has lower drive current but is easier to fabricate. >
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