Abstract
The electrical properties of NiO-doped WO3 thick films were investigated as a function of the amount of NiO, partial pressure of oxygen, temperature and NO2 concentration. NiO-doped WO3 thick films were prepared by the screen-printing technique. The grain growth is inhibited by the addition of NiO. The electrical conductance of undoped WO3 is high at a low partial pressure of oxygen. The electrical conductance of NiO-doped WO3 increases with NiO content of up to 1.0 mol%, and then decreases. The sensitivity for NO2 gas increased up to 1.0 mol% of NiO, and then decreased.
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