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Abstract
NiO-doped WO 3 thick films were prepared by the screen-printing technique. The microstructure and the electrical properties were investigated as functions of the amount of NiO, partial pressure of oxygen, concentration of NO 2 and temperature. The grain growth is inhibited by the addition of NiO. The electrical conductance of undoped WO 3 is high at low partial pressure of oxygen. The electrical conductance of NiO-doped WO 3 in air increases with NiO content of up to 1.0 mol%, and then it decreases. The sensitivity for NO 2 gas increases for samples with 1.0 mol% of NiO, and then it decreases for 10 mol% NiO samples.
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