High-temperature dielectric responses in all-nanosheet capacitors

Abstract

We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru0.95O2 as electrodes and dielectric Ca2Nb3O10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high-k dielectric response (∼155) and a moderate insulation resistance (∼1 × 10−5 A/cm2) at high temperatures up to 200 °C. The concomitant presence of high εr, low leakage profile, and thermal stability in high-k nanocapacitors is critically important for application in high-temperature electronics.