Abstract
High-temperature (∼90–150 °C) conduction mechanisms of metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric are studied. In the low field range, the Schottky emission current is dominant, and the deduced dielectric constant is close to the static one of HfO2. In the high field range, the resulting leakage current complies with the Poole-Frenkel (PF) emission, which is demonstrated by the fact that the extracted dielectric constant equals the optical frequency one (i.e., square of refractive index) of HfO2. The underlying mechanisms are discussed based on carrier velocities under different electric fields. Further, the deduced Schottky barrier height is ∼0.251–0.274 eV in the low field range, which relates to the contributions from high density traps in the HfO2 film and the nonideal TaN/HfO2 interface, etc. The extracted trap potential well depth for the PF effect is ∼1.11–1.37 eV in the high field range.
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