Abstract
Uni-traveling-carrier photodiodes (UTC-PDs) can be monolithically integrated with InP heterojunction bipolar transistors (HBTs) using Be ion implantation and rapid thermal annealing (RTA) for an activation of implanted Be. UTC-PDs share the base and collector layers of the HBTs; the photoabsorption layer of the UTC-PD is formed by selectively doping the collector with Be. The fabricated UTC-PDs exhibit an output voltage of over 0.5 V and a 3-dB bandwidth of 100 GHz. The HBTs fabricated on the same wafer provide a peak ft of 150 GHz and a peak fmax of 250 GHz at a collector current density of 1 mA/µm2. The RTA used to fabricate the UTC-PDs does not seriously degrade the current gain of the HBTs. These results indicate that Be ion implantation is a promising technique for integrating UTC-PDs and InP HBTs on the same wafer.
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