Abstract

Abstract. An attractive solution to provide several channels with very high data rates of tens of Gbit s−1 for digital-to-analog converters (DACs) in arbitrary waveform generators (AWGs) is to use a high speed serializer in front of the DAC. As data sources, on-chip memories, digital signal processors or field-programmable gate arrays can be used. Here, we present a serializer consisting of a 19 channel 16:1 multiplexer (MUX) for output data rates up to 64 Gbit s−1 per channel and a low skew (∼ 8.8 ps) two-phase frequency divider and clock distribution network that is completely realized in static CMOS logic. The circuit is designed in a 28 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) technology and will be used in an 8 bit 64 GS s−1 DAC between the on-chip memory and the DAC output stage. Due to a four bits unary and four bits binary segmentation, a 19 channel MUX is required. Simulations on layout level reveal a data-dependent peak-to-peak jitter of less than 1.8 ps at the output of one MUX channel with a total average power consumption of approximately 1.15 W of the whole MUX and clock network.

Highlights

  • Digital-to-analog converters (DACs) with very high conversion rates and bandwidth are of special interest for optical coherent transceiver systems

  • Higher-order modulation schemes require high performance DACs. They are used in arbitrary waveform generators (AWGs)

  • The circuit is designed in a 28 nm Fully-Depleted Silicon-onInsulator (FD-SOI) technology and is completely realized in static CMOS logic

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Summary

Introduction

Digital-to-analog converters (DACs) with very high conversion rates and bandwidth are of special interest for optical coherent transceiver systems. The circuit is designed in a 28 nm Fully-Depleted Silicon-onInsulator (FD-SOI) technology and is completely realized in static CMOS logic. It will be used in an 8 bit 64 GS s−1 segmented DAC between the on-chip memory and the DAC output stage. Technology allows for flip well transistors due to a buried oxide (BOX) layer of 25 nm below the thin channel of 7 nm, meaning an NMOS transistor is built on an n-well and a PMOS transistor is build on a p-well layer separated by the BOX This specific feature enables more efficient forward body biasing within a much larger voltage range compared to bulk processes which is an advantage owing to strong threshold voltage control and faster switching processes.

Multiplexer Structure
Frequency Divider and Clock Distribution Network
16 GHz 32 GHz
32 GHz clk VDD n1 1
Layout and Simulation Results
Conclusions
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