Abstract
This article presents a novel design of high-speed ring oscillator (RO) in n-type-only indium-zinc-oxide (IZO) thin-film transistor (TFT) technology. The proposed ROs combine the advantage of the skewed delay (SD) scheme and the bootstrap inverter to achieve a higher oscillation frequency. The design of improved output buffers with stronger driving capability is also included. For comparison, the proposed seven-stage SD ROs and the conventional bootstrap RO are fabricated on the same glass. It is measured that the oscillation frequencies of the SD ROs with -t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pd</sub> and 0 SD are improved by more than 45% and 25% within the supply voltage ranges from 6 V up to 20 V. In addition, the measured output swings of the proposed boost buffers are improved by more than 50% with input frequencies higher than megahertz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
