Abstract
Enhancement-mode GaAs MESFET logics fabricated by electron beam lithography have shown high speed and low power dissipation characteristics. A minimum propagation delay time of 77 ps at a power dissipation of 977 µW was obtainsd for a 0.8 µm gate length ring oscillator. A minimum power-delay product was 1.6 fJ at a propagation delay time of 200 ps. Low temperature operation was also performed and higher switching speed was obtained. The minimum propagation delay time was 44 ps and the associated power dissipation was 2.9 mW at liquid nitrogen temperature.
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