Abstract
High-radiative recombination efficiency arrays of InGaAs/GaAs strained quantum wires have been fabricated by a combination of e-beam lithography, dry and wet etching, sidewall desorption, migration-enhanced epitaxial and molecular beam epitaxial regrowth. The structure was evaluated by reflection high-energy electron diffraction, cross-sectional transmission electron microscopy, and photoluminescence spectroscopy. Transmission electron microscopy study showed that a defect-free regrown layer and excellent sidewall coverage have been attained. From the photoluminescence measurement, the sample showed high-radiative efficiency, and had strong photoluminescence for wire widths down to 190 nm.
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