Abstract
High quality GaN films have been successfully grown on multi-AlN/sapphire templates by metal organic chemical vapor deposition system. The Hall mobility and the carrier concentration of 720 cm2/Vs and 6.7x1016 cm-3 at 300K, respectively, along with low dislocation density of 4.1x109 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 160 and 290 arcsec for (0004) and (20-24) reflection planes also obtained, respectively. Besides that, the atomic force microscopy images showed smooth surface morphology and a higher intensity near the band edge was also observed by photoluminescence measurement result.
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