Abstract
Liquid carbon tetrachloride (CCl<SUB>4</SUB>) was used as dopants for the growth of p-type GaAs and AlGaAs materials by low pressure metalorganic chemical vapor phase deposition. Heavily carbon doped (1.9 X 10<SUP>20</SUP> cm<SUP>-3</SUP>) GaAs and high quality p-type Al<SUB>0.3</SUB>Ga<SUB>0.7</SUB>As materials were obtained. Several key growth parameters, such as growth temperature (560 degree(s)C - 725 degree(s)C), V/III ration (20 - 150) and CCl<SUB>4</SUB> molecular flow (10<SUP>-7</SUP> mol/min- 10<SUP>-5</SUP> mol/min), were changed to investigate their influence on doping efficiency, growth rate and material properties. Electrochemistry capacity-voltage, Hall effect and photoluminescence methods were adopted to measure the electrical and optical properties. X ray double crystal diffraction method was used to study the relationships of carbon doping level and crystal lattice constant of epitaxial layers. On the basis of these research, carbon doped GaAs tunnel diode and high power GaAs/AlGaAs/InGaAs strain quantum well semiconductor laser structures were grown to qualify the carbon doped GaAs/AlGaAs materials comprehensively.
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